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DMN6040SK3-13 - TO-252-2

DMN6040SK3-13

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

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DMN6040SK3-13 - TO-252-2

DMN6040SK3-13

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN6040SK3-13
Current - Continuous Drain (Id) @ 25°C20 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs22.4 nC
Input Capacitance (Ciss) (Max) @ Vds1287 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)42 W
Rds On (Max) @ Id, Vgs40 mOhm
Supplier Device PackageTO-252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.63
10$ 0.53
100$ 0.37
500$ 0.29
1000$ 0.24
Digi-Reel® 1$ 0.63
10$ 0.53
100$ 0.37
500$ 0.29
1000$ 0.24
Tape & Reel (TR) 2500$ 0.21
5000$ 0.20
12500$ 0.19
25000$ 0.18

Description

General part information

DMN6040SFDEQ Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.