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DMN6040SE-13 - Package Image for SOT223

DMN6040SE-13

Active
Diodes Inc

60V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN6040SE-13 - Package Image for SOT223

DMN6040SE-13

Active
Diodes Inc

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN6040SE-13
Current - Continuous Drain (Id) @ 25°C5 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs22.4 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1287 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-261AA, TO-261-4
Power Dissipation (Max)1.2 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs40 mOhm
Supplier Device PackageSOT-223-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.54
10$ 0.46
100$ 0.32
500$ 0.25
1000$ 0.20
Digi-Reel® 1$ 0.54
10$ 0.46
100$ 0.32
500$ 0.25
1000$ 0.20
Tape & Reel (TR) 2500$ 0.18
5000$ 0.17
12500$ 0.16
25000$ 0.16

Description

General part information

DMN6040SFDEQ Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.