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DMN6040SVTQ-13 - TSOT-26

DMN6040SVTQ-13

Active
Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR,

Deep-Dive with AI

Search across all available documentation for this part.

DMN6040SVTQ-13 - TSOT-26

DMN6040SVTQ-13

Active
Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR,

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN6040SVTQ-13
Current - Continuous Drain (Id) @ 25°C5 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs22.4 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1287 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)1.2 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs44 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.62
10$ 0.53
100$ 0.37
500$ 0.29
1000$ 0.23
2000$ 0.21
5000$ 0.20
Digi-Reel® 1$ 0.62
10$ 0.53
100$ 0.37
500$ 0.29
1000$ 0.23
2000$ 0.21
5000$ 0.20
Tape & Reel (TR) 10000$ 0.19
20000$ 0.18

Description

General part information

DMN6040SFDEQ Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.