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STL13N65M2 - 8PowerVDFN

STL13N65M2

Active
STMicroelectronics

N-CHANNEL 650 V, 365 MOHM TYP., 6.5 A MDMESH M2 POWER MOSFET IN A POWERFLAT 5X6 HV PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheetAN4406+25
STL13N65M2 - 8PowerVDFN

STL13N65M2

Active
STMicroelectronics

N-CHANNEL 650 V, 365 MOHM TYP., 6.5 A MDMESH M2 POWER MOSFET IN A POWERFLAT 5X6 HV PACKAGE

Deep-Dive with AI

DocumentsDatasheetAN4406+25

Technical Specifications

Parameters and characteristics for this part

SpecificationSTL13N65M2
Current - Continuous Drain (Id) @ 25°C6.5 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC
Input Capacitance (Ciss) (Max) @ Vds590 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)52 W
Rds On (Max) @ Id, Vgs475 mOhm
Supplier Device PackagePowerFlat™ (5x6) HV
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.88
10$ 1.56
100$ 1.25
500$ 1.05
1000$ 0.89
Digi-Reel® 1$ 1.88
10$ 1.56
100$ 1.25
500$ 1.05
1000$ 0.89
Tape & Reel (TR) 3000$ 0.85
6000$ 0.82
9000$ 0.79

Description

General part information

STL13N60DM2 Series

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.