STL13N60DM2 Series

N-channel 650 V, 365 mOhm typ., 6.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

Catalog

N-channel 650 V, 365 mOhm typ., 6.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

Part	Technology	Operating Temperature	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]
STMicroelectronics STL13N60DM2	MOSFET (Metal Oxide)	150 °C	8-PowerVDFN	730 pF	600 V	Surface Mount	52 W	25 V	370 mOhm	19 nC	8 A	PowerFlat™ (5x6) HV	N-Channel	5 V	10 V
STMicroelectronics STL13N60M2	MOSFET (Metal Oxide)	150 °C	8-PowerVDFN	580 pF	600 V	Surface Mount		25 V	420 mOhm	17 nC	7 A	PowerFlat™ (5x6) HV	N-Channel	4 V	10 V	55 W
STMicroelectronics STL13N65M2	MOSFET (Metal Oxide)		8-PowerVDFN	590 pF	650 V	Surface Mount	52 W	25 V	475 mOhm	17 nC	6.5 A	PowerFlat™ (5x6) HV	N-Channel	4 V	10 V		-55 °C	150 °C

Catalog

N-channel 650 V, 365 mOhm typ., 6.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

Description

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.