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STL13N60M2 - 8PowerVDFN

STL13N60M2

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STMicroelectronics

N-CHANNEL 600 V, 0.39 OHM TYP., 7 A MDMESH M2 POWER MOSFET IN A POWERFLAT 5X6 HV PACKAGE

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STL13N60M2 - 8PowerVDFN

STL13N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.39 OHM TYP., 7 A MDMESH M2 POWER MOSFET IN A POWERFLAT 5X6 HV PACKAGE

Deep-Dive with AI

DocumentsDatasheet+25

Technical Specifications

Parameters and characteristics for this part

SpecificationSTL13N60M2
Current - Continuous Drain (Id) @ 25°C7 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC
Input Capacitance (Ciss) (Max) @ Vds580 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case8-PowerVDFN
Power Dissipation (Max) [Max]55 W
Rds On (Max) @ Id, Vgs420 mOhm
Supplier Device PackagePowerFlat™ (5x6) HV
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.89
10$ 1.57
100$ 1.25
500$ 1.06
1000$ 0.90
Digi-Reel® 1$ 1.89
10$ 1.57
100$ 1.25
500$ 1.06
1000$ 0.90
Tape & Reel (TR) 3000$ 0.80

Description

General part information

STL13N60DM2 Series

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.