IR2111SPBF

NRND

Infineon Technologies

THE IR2111S IS A 600 V HALF-BRIDGE GATE DRIVER IC WITH SHOOT THROUGH PROTECTION (8 LEAD SOIC PACKAGE)

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DocumentsDatasheet Technical Data Sheet EN

IR2111SPBF

NRND

Infineon Technologies

THE IR2111S IS A 600 V HALF-BRIDGE GATE DRIVER IC WITH SHOOT THROUGH PROTECTION (8 LEAD SOIC PACKAGE)

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2111SPBF

Channel Type	Synchronous
Current - Peak Output (Source, Sink) [custom]	500 mA
Current - Peak Output (Source, Sink) [custom]	250 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	12.6 V, 8.3 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	80 ns
Rise / Fall Time (Typ) [custom]	40 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2111 Series

Part	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Channel Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Number of Drivers	Gate Type	Supplier Device Package	Input Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Driven Configuration	High Side Voltage - Max (Bootstrap) [Max]	Logic Voltage - VIL, VIH	Package / Case	Package / Case [y]	Package / Case [x]	Package / Case	Package / Case
Infineon Technologies IR2111S	150 °C	-40 °C	Surface Mount	Synchronous	500 mA	250 mA	2	IGBT N-Channel MOSFET	8-SOIC	Non-Inverting	20 V	10 VDC	80 ns	40 ns	Half-Bridge	600 V	8.3 V 12.6 V	8-SOIC	3.9 mm	0.154 in
Infineon Technologies IR2111STRPBF	150 °C	-40 °C	Surface Mount	Synchronous	500 mA	250 mA	2	IGBT N-Channel MOSFET	8-SOIC	Non-Inverting	20 V	10 VDC	80 ns	40 ns	Half-Bridge	600 V	8.3 V 12.6 V	8-SOIC	3.9 mm	0.154 in
Infineon Technologies IR2111	150 °C	-40 °C	Through Hole	Synchronous	500 mA	250 mA	2	IGBT N-Channel MOSFET	8-PDIP	Non-Inverting	20 V	10 VDC	80 ns	40 ns	Half-Bridge	600 V	8.3 V 12.6 V	8-DIP			0.3 in	7.62 mm
Infineon Technologies IR2111SPBF	150 °C	-40 °C	Surface Mount	Synchronous	500 mA	250 mA	2	IGBT N-Channel MOSFET	8-SOIC	Non-Inverting	20 V	10 VDC	80 ns	40 ns	Half-Bridge	600 V	8.3 V 12.6 V	8-SOIC	3.9 mm	0.154 in
Infineon Technologies IR2111STR	150 °C	-40 °C	Surface Mount	Synchronous	500 mA	250 mA	2	IGBT N-Channel MOSFET	8-SOIC	Non-Inverting	20 V	10 VDC	80 ns	40 ns	Half-Bridge	600 V	8.3 V 12.6 V	8-SOIC	3.9 mm	0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.90
		10	$ 1.71
		95	$ 1.37
		285	$ 1.29
		570	$ 1.13
Newark	Each	1	$ 1.72
		10	$ 1.36
		100	$ 1.24
		500	$ 1.18
		1000	$ 1.14
		2500	$ 1.13
		7600	$ 1.13

Description

General part information

IR2111 Series

The IR2111SPBF is a high voltage high speed power MOSFET and IGBT Half-bridge Driver with dependent high and low-side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Internal dead-time is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.