IR2111STRPBF

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Infineon Technologies

IC GATE DRVR HALF-BRIDGE 8SOIC

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Infineon Technologies

IC GATE DRVR HALF-BRIDGE 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	IR2111STRPBF

Channel Type	Synchronous
Current - Peak Output (Source, Sink) [custom]	500 mA
Current - Peak Output (Source, Sink) [custom]	250 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	12.6 V, 8.3 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	80 ns
Rise / Fall Time (Typ) [custom]	40 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Channel Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Number of Drivers	Gate Type	Supplier Device Package	Input Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Driven Configuration	High Side Voltage - Max (Bootstrap) [Max]	Logic Voltage - VIL, VIH	Package / Case	Package / Case [y]	Package / Case [x]	Package / Case	Package / Case
Infineon Technologies IR2111S	150 °C	-40 °C	Surface Mount	Synchronous	500 mA	250 mA	2	IGBT N-Channel MOSFET	8-SOIC	Non-Inverting	20 V	10 VDC	80 ns	40 ns	Half-Bridge	600 V	8.3 V 12.6 V	8-SOIC	3.9 mm	0.154 in
Infineon Technologies IR2111STRPBF	150 °C	-40 °C	Surface Mount	Synchronous	500 mA	250 mA	2	IGBT N-Channel MOSFET	8-SOIC	Non-Inverting	20 V	10 VDC	80 ns	40 ns	Half-Bridge	600 V	8.3 V 12.6 V	8-SOIC	3.9 mm	0.154 in
Infineon Technologies IR2111	150 °C	-40 °C	Through Hole	Synchronous	500 mA	250 mA	2	IGBT N-Channel MOSFET	8-PDIP	Non-Inverting	20 V	10 VDC	80 ns	40 ns	Half-Bridge	600 V	8.3 V 12.6 V	8-DIP			0.3 in	7.62 mm
Infineon Technologies IR2111SPBF	150 °C	-40 °C	Surface Mount	Synchronous	500 mA	250 mA	2	IGBT N-Channel MOSFET	8-SOIC	Non-Inverting	20 V	10 VDC	80 ns	40 ns	Half-Bridge	600 V	8.3 V 12.6 V	8-SOIC	3.9 mm	0.154 in
Infineon Technologies IR2111STR	150 °C	-40 °C	Surface Mount	Synchronous	500 mA	250 mA	2	IGBT N-Channel MOSFET	8-SOIC	Non-Inverting	20 V	10 VDC	80 ns	40 ns	Half-Bridge	600 V	8.3 V 12.6 V	8-SOIC	3.9 mm	0.154 in

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Half-Bridge Gate Driver IC Non-Inverting 8-SOIC

Technical documentation and resources