IR2111 Series

Catalog

IC GATE DRVR HALF-BRIDGE 8SOIC

Part	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Channel Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Number of Drivers	Gate Type	Supplier Device Package	Input Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Driven Configuration	High Side Voltage - Max (Bootstrap) [Max]	Logic Voltage - VIL, VIH	Package / Case	Package / Case [y]	Package / Case [x]	Package / Case	Package / Case
Infineon Technologies IR2111S	150 °C	-40 °C	Surface Mount	Synchronous	500 mA	250 mA	2	IGBT N-Channel MOSFET	8-SOIC	Non-Inverting	20 V	10 VDC	80 ns	40 ns	Half-Bridge	600 V	8.3 V 12.6 V	8-SOIC	3.9 mm	0.154 in
Infineon Technologies IR2111STRPBF	150 °C	-40 °C	Surface Mount	Synchronous	500 mA	250 mA	2	IGBT N-Channel MOSFET	8-SOIC	Non-Inverting	20 V	10 VDC	80 ns	40 ns	Half-Bridge	600 V	8.3 V 12.6 V	8-SOIC	3.9 mm	0.154 in
Infineon Technologies IR2111	150 °C	-40 °C	Through Hole	Synchronous	500 mA	250 mA	2	IGBT N-Channel MOSFET	8-PDIP	Non-Inverting	20 V	10 VDC	80 ns	40 ns	Half-Bridge	600 V	8.3 V 12.6 V	8-DIP			0.3 in	7.62 mm
Infineon Technologies IR2111SPBF	150 °C	-40 °C	Surface Mount	Synchronous	500 mA	250 mA	2	IGBT N-Channel MOSFET	8-SOIC	Non-Inverting	20 V	10 VDC	80 ns	40 ns	Half-Bridge	600 V	8.3 V 12.6 V	8-SOIC	3.9 mm	0.154 in
Infineon Technologies IR2111STR	150 °C	-40 °C	Surface Mount	Synchronous	500 mA	250 mA	2	IGBT N-Channel MOSFET	8-SOIC	Non-Inverting	20 V	10 VDC	80 ns	40 ns	Half-Bridge	600 V	8.3 V 12.6 V	8-SOIC	3.9 mm	0.154 in