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DMN601VKQ-7 - Package Image for SOT563

DMN601VKQ-7

Active
Diodes Inc

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Deep-Dive with AI

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DMN601VKQ-7 - Package Image for SOT563

DMN601VKQ-7

Active
Diodes Inc

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN601VKQ-7
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C305 mA
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds50 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseSOT-666, SOT-563
Power - Max [Max]250 mW
Rds On (Max) @ Id, Vgs2 Ohm
Supplier Device PackageSOT-563
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.37
10$ 0.26
100$ 0.13
500$ 0.12
1000$ 0.09
Digi-Reel® 1$ 0.37
10$ 0.26
100$ 0.13
500$ 0.12
1000$ 0.09
Tape & Reel (TR) 3000$ 0.08
6000$ 0.08
9000$ 0.07
30000$ 0.07
75000$ 0.06
150000$ 0.06

Description

General part information

DMN601DWKQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: general-purpose interfacing switches, power-management functions, and analog switches.