DMN601DWKQ Series

Dual N-Channel Enhancement Mode Field Effect Transistor

Catalog

Dual N-Channel Enhancement Mode Field Effect Transistor

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Vgs(th) (Max) @ Id [Max]	Qualification	Drain to Source Voltage (Vdss)	Configuration	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Grade	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id
Diodes Inc DMN601DWKQ-7	SOT-363	0.304 nC	200 mW	2.5 V	AEC-Q101	60 V	2 N-Channel (Dual)	MOSFET (Metal Oxide)	6-TSSOP SC-88 SOT-363	2 Ohm	50 pF	150 °C	-65 °C	Automotive	Surface Mount	305 mA
Diodes Inc DMN601WKQ-13	SOT-323			2.5 V	AEC-Q101	60 V		MOSFET (Metal Oxide)	SC-70 SOT-323	2 Ohm	50 pF	150 °C	-65 °C	Automotive	Surface Mount		200 mW	4.5 V 10 V	N-Channel	20 V
Diodes Inc DMN601TK-7	SOT-523			2.5 V		60 V		MOSFET (Metal Oxide)	SOT-523	2 Ohm	50 pF	150 °C	-65 °C		Surface Mount	300 mA			N-Channel	20 V	10 V	5 V	150 mW
Diodes Inc DMN601WKQ-7	SOT-323			2.5 V	AEC-Q101	60 V		MOSFET (Metal Oxide)	SC-70 SOT-323	2 Ohm	50 pF	150 °C	-65 °C	Automotive	Surface Mount	300 mA	200 mW	4.5 V 10 V	N-Channel	20 V
Diodes Inc DMN601VKQ-7	SOT-563		250 mW			60 V	2 N-Channel (Dual)	MOSFET (Metal Oxide)	SOT-563 SOT-666	2 Ohm	50 pF	150 °C	-65 °C		Surface Mount	305 mA								2.5 V
Diodes Inc DMN601WK-7	SOT-323			2.5 V		60 V		MOSFET (Metal Oxide)	SC-70 SOT-323	2 Ohm	50 pF	150 °C	-65 °C		Surface Mount	300 mA	200 mW	4.5 V 10 V	N-Channel	20 V

Catalog

Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface-Mount Package

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMN601VKQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: general-purpose interfacing switches, power-management functions, and analog switches.