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DMN601WKQ-13 - Package Image for SOT323

DMN601WKQ-13

Active
Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR,

Deep-Dive with AI

Search across all available documentation for this part.

DMN601WKQ-13 - Package Image for SOT323

DMN601WKQ-13

Active
Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR,

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN601WKQ-13
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds50 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseSC-70, SOT-323
Power Dissipation (Max)200 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs2 Ohm
Supplier Device PackageSOT-323
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.06
20000$ 0.06
30000$ 0.06
50000$ 0.05
70000$ 0.05
100000$ 0.05

Description

General part information

DMN601DWKQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: general-purpose interfacing switches, power-management functions, and analog switches.