
DMN601WKQ-13
ActiveDiodes Inc
SMALL SIGNAL FIELD-EFFECT TRANSISTOR,
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DMN601WKQ-13
ActiveDiodes Inc
SMALL SIGNAL FIELD-EFFECT TRANSISTOR,
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN601WKQ-13 |
|---|---|
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | SC-70, SOT-323 |
| Power Dissipation (Max) | 200 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 2 Ohm |
| Supplier Device Package | SOT-323 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 10000 | $ 0.06 | |
| 20000 | $ 0.06 | |||
| 30000 | $ 0.06 | |||
| 50000 | $ 0.05 | |||
| 70000 | $ 0.05 | |||
| 100000 | $ 0.05 | |||
Description
General part information
DMN601DWKQ Series
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: general-purpose interfacing switches, power-management functions, and analog switches.
Documents
Technical documentation and resources