Specification	CSD17551Q5A

Current - Continuous Drain (Id) (Tc)	48 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	7.2 nC
Input Capacitance (Ciss) (Max)	1272 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Length	5 mm
Package Name	8-VSONP
Package Width	6 mm
Power Dissipation (Max)	3 W
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.2 V

CSD17551 Series

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 9 mOhm

Part	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	FET Type	Gate Charge (Max)	Vgs(th) (Max)	Package / Case	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	Package Name	Package Width	Package Length	Mounting Type	Rds On (Max)
Texas Instruments CSD17551Q3A	20 V	12 A	-55 °C	150 °C	2.6 W	N-Channel	7.8 nC	2.1 V	8-PowerVDFN	MOSFET (Metal Oxide)	30 V	10 V	4.5 V	1370 pF	8-VSONP	3.3 mm	3 mm	Surface Mount	9 mOhm
Texas Instruments CSD17551Q5A	20 V	48 A	-55 °C	150 °C	3 W	N-Channel	7.2 nC	2.2 V	8-PowerTDFN	MOSFET (Metal Oxide)	30 V	10 V	4.5 V	1272 pF	8-VSONP	6 mm	5 mm	Surface Mount