30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 9 mOhm
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 9 mOhm
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 9 mOhm
| Part | Vgs (Max) | Current - Continuous Drain (Id) (Tc) | Operating Temperature (Min) | Operating Temperature (Max) | Power Dissipation (Max) | FET Type | Gate Charge (Max) | Vgs(th) (Max) | Package / Case | Technology | Drain to Source Voltage (Vdss) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Input Capacitance (Ciss) (Max) | Package Name | Package Width | Package Length | Mounting Type | Rds On (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Texas Instruments | 20 V | 12 A | -55 °C | 150 °C | 2.6 W | N-Channel | 7.8 nC | 2.1 V | 8-PowerVDFN | MOSFET (Metal Oxide) | 30 V | 10 V | 4.5 V | 1370 pF | 8-VSONP | 3.3 mm | 3 mm | Surface Mount | 9 mOhm |
 Texas Instruments | 20 V | 48 A | -55 °C | 150 °C | 3 W | N-Channel | 7.2 nC | 2.2 V | 8-PowerTDFN | MOSFET (Metal Oxide) | 30 V | 10 V | 4.5 V | 1272 pF | 8-VSONP | 6 mm | 5 mm | Surface Mount |