
IPB100N06S205ATMA4
ObsoleteInfineon Technologies
MOSFET N-CH 55V 100A TO263-3
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IPB100N06S205ATMA4
ObsoleteInfineon Technologies
MOSFET N-CH 55V 100A TO263-3
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB100N06S205ATMA4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A |
| Drain to Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5110 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) [Max] | 300 W |
| Rds On (Max) @ Id, Vgs | 4.7 mOhm |
| Supplier Device Package | PG-TO263-3-2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
IPB100 Series
| Part | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | Technology | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Mounting Type | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 3.3 mOhm | 40 V | 100 A | 300 W | MOSFET (Metal Oxide) | N-Channel | -55 °C | 175 ░C | 10 V | 4 V | 5300 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 172 nC | 20 V | Surface Mount | PG-TO263-3-2 | ||
Infineon Technologies | 4.8 mOhm | 100 V | 100 A | 300 W | MOSFET (Metal Oxide) | N-Channel | -55 °C | 175 ░C | 10 V | 4 V | 11570 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 20 V | Surface Mount | PG-TO263-3-2 | 176 nC | ||
Infineon Technologies | 4.7 mOhm | 55 V | 100 A | 300 W | MOSFET (Metal Oxide) | N-Channel | -55 °C | 175 ░C | 10 V | 4 V | 5110 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 170 nC | 20 V | Surface Mount | PG-TO263-3-2 | ||
Infineon Technologies | 2.4 mOhm | 40 V | 100 A | MOSFET (Metal Oxide) | N-Channel | -55 °C | 175 ░C | 10 V | 4 V | 7180 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 20 V | Surface Mount | PG-TO263-3-2 | 90 nC | 115 W |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IPB100 Series
N-Channel 55 V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2
Documents
Technical documentation and resources