IPB100 Series

Catalog

INFINEON’S IPB100N04S2-04 OPTIMOS-T2 40V MOSFET WITH ULTRA LOW RDS(ON), 175°C OPERATING TEMP, AEC Q101 FOR AUTOMOTIVE. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
Infineon Technologies IPB100N04S204ATMA4	3.3 mOhm	40 V	100 A	300 W	MOSFET (Metal Oxide)	N-Channel	-55 °C	175 ░C	10 V	4 V	5300 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	172 nC	20 V	Surface Mount	PG-TO263-3-2
Infineon Technologies IPB100N10S305ATMA1	4.8 mOhm	100 V	100 A	300 W	MOSFET (Metal Oxide)	N-Channel	-55 °C	175 ░C	10 V	4 V	11570 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		20 V	Surface Mount	PG-TO263-3-2	176 nC
Infineon Technologies IPB100N06S205ATMA4	4.7 mOhm	55 V	100 A	300 W	MOSFET (Metal Oxide)	N-Channel	-55 °C	175 ░C	10 V	4 V	5110 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	170 nC	20 V	Surface Mount	PG-TO263-3-2
Infineon Technologies IPB100N04S4H2ATMA1	2.4 mOhm	40 V	100 A		MOSFET (Metal Oxide)	N-Channel	-55 °C	175 ░C	10 V	4 V	7180 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		20 V	Surface Mount	PG-TO263-3-2	90 nC	115 W