IPB100N04S4H2ATMA1

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Infineon Technologies

INFINEON’S IPB100N04S4-H2 OPTIMOS-T2 40V, AEC QUALIFIED, ROHS COMPLIANT, 175°C, LOWEST RDS, 100% AVALANCHE TESTED. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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IPB100N04S4H2ATMA1

Active

Infineon Technologies

INFINEON’S IPB100N04S4-H2 OPTIMOS-T2 40V, AEC QUALIFIED, ROHS COMPLIANT, 175°C, LOWEST RDS, 100% AVALANCHE TESTED. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB100N04S4H2ATMA1

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	90 nC
Input Capacitance (Ciss) (Max) @ Vds	7180 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	115 W
Rds On (Max) @ Id, Vgs	2.4 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPB100 Series

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
Infineon Technologies IPB100N04S204ATMA4	3.3 mOhm	40 V	100 A	300 W	MOSFET (Metal Oxide)	N-Channel	-55 °C	175 ░C	10 V	4 V	5300 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	172 nC	20 V	Surface Mount	PG-TO263-3-2
Infineon Technologies IPB100N10S305ATMA1	4.8 mOhm	100 V	100 A	300 W	MOSFET (Metal Oxide)	N-Channel	-55 °C	175 ░C	10 V	4 V	11570 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		20 V	Surface Mount	PG-TO263-3-2	176 nC
Infineon Technologies IPB100N06S205ATMA4	4.7 mOhm	55 V	100 A	300 W	MOSFET (Metal Oxide)	N-Channel	-55 °C	175 ░C	10 V	4 V	5110 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	170 nC	20 V	Surface Mount	PG-TO263-3-2
Infineon Technologies IPB100N04S4H2ATMA1	2.4 mOhm	40 V	100 A		MOSFET (Metal Oxide)	N-Channel	-55 °C	175 ░C	10 V	4 V	7180 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		20 V	Surface Mount	PG-TO263-3-2	90 nC	115 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.46
		10	$ 2.26
		100	$ 1.58
		500	$ 1.28
	Digi-Reel®	1	$ 3.46
		10	$ 2.26
		100	$ 1.58
		500	$ 1.28
	Tape & Reel (TR)	1000	$ 1.19
		2000	$ 1.15
Newark	Each (Supplied on Cut Tape)	1	$ 1.65
		10	$ 1.20
		25	$ 1.11
		50	$ 1.02
		100	$ 0.93
		250	$ 0.92
		500	$ 0.88
		1000	$ 0.88

Description

General part information

IPB100 Series

N-Channel 40 V 100A (Tc) 115W (Tc) Surface Mount PG-TO263-3-2

Documents

Technical documentation and resources