CSD16327Q3T

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Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 4.8 MOHM

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CSD16327Q3T

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Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 4.8 MOHM

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Description Specifications Series Pricing CAD Documents

Description

General part information

CSD16327Q3 Series

This 25-V, 3.4-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.

Technical Specifications

Parameters and characteristics for this part

Specification	CSD16327Q3T

Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	3 V
Drive Voltage (Min Rds On)	8 V
FET Type	N-Channel
Gate Charge (Max)	8.4 nC
Input Capacitance (Ciss) (Max)	1300 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Length	3.3 mm
Package Name	8-VSON-CLIP
Package Width	3.3 mm
Power Dissipation (Max)	74 W
Rds On (Max)	4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-8 V
Vgs (Max) Positive	10 V
Vgs(th) (Max)	1.4 V

CSD16327Q3 Series

Part	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Mounting Type	Package Name	Package Width	Package Length	Vgs(th) (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Rds On (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Technology	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	FET Type
Texas Instruments CSD16327Q3	8.4 nC	1300 pF	60 A	Surface Mount	8-VSON-CLIP	3.3 mm	3.3 mm	1.4 V	-8 V	10 V	3 V	8 V	4 mOhm	3 W	25 V	MOSFET (Metal Oxide)	8-PowerTDFN	-55 °C	150 °C	N-Channel
Texas Instruments CSD16327Q3T	8.4 nC	1300 pF	60 A	Surface Mount	8-VSON-CLIP	3.3 mm	3.3 mm	1.4 V	-8 V	10 V	3 V	8 V	4 mOhm	74 W	25 V	MOSFET (Metal Oxide)	8-PowerTDFN	-55 °C	150 °C	N-Channel