CSD16327Q3 Series
Manufacturer: Texas Instruments
Beta
⌘K
25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 4.8 MOHM
| Part | Gate Charge (Max) | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Tc) | Mounting Type | Package Name | Package Width | Package Length | Vgs(th) (Max) | Vgs (Max) Negative | Vgs (Max) Positive | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Rds On (Max) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Technology | Package / Case | Operating Temperature (Min) | Operating Temperature (Max) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Texas Instruments | 8.4 nC | 1300 pF | 60 A | Surface Mount | 8-VSON-CLIP | 3.3 mm | 3.3 mm | 1.4 V | -8 V | 10 V | 3 V | 8 V | 4 mOhm | 3 W | 25 V | MOSFET (Metal Oxide) | 8-PowerTDFN | -55 °C | 150 °C | N-Channel |
 Texas Instruments | 8.4 nC | 1300 pF | 60 A | Surface Mount | 8-VSON-CLIP | 3.3 mm | 3.3 mm | 1.4 V | -8 V | 10 V | 3 V | 8 V | 4 mOhm | 74 W | 25 V | MOSFET (Metal Oxide) | 8-PowerTDFN | -55 °C | 150 °C | N-Channel |