
IKW75N65RH5XKSA1
ActiveTHE IKW75N65RH5 IS A 650 V, 75 A TRENCHSTOP™ 5 H5 HYBRID COOLSIC™ IGBT DISCRETE
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IKW75N65RH5XKSA1
ActiveTHE IKW75N65RH5 IS A 650 V, 75 A TRENCHSTOP™ 5 H5 HYBRID COOLSIC™ IGBT DISCRETE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IKW75N65RH5XKSA1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Current - Collector Pulsed (Icm) | 300 A |
| Gate Charge | 168 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 395 W |
| Supplier Device Package | PG-TO247-3 |
| Switching Energy | 360 µJ, 300 µJ |
| Td (on/off) @ 25°C | 26 ns, 180 ns |
| Test Condition | 15 V, 37.5 A, 400 V, 9 Ohm |
| Vce(on) (Max) @ Vge, Ic | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IKW75N65 Series
650 V, 75 A TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation CoolSiC™ Schottky barrier diode in TO-247-3 package. The ultra-fast 650 V hard-switchingTRENCHSTOP™ 5 H5IGBT benefits very low switching losses at switching speed above 30 kHz. Combination of ultra-fastTRENCHSTOP™ 5 H5IGBT with half-ratedfreewheeling SiC Schottky barrier diodesinCoolSiC™ Hybrid discreteenables unprecedented reduction of total switching losses and allows to increase significantly switching frequency.
Documents
Technical documentation and resources