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IKW75N65RH5XKSA1 - INFINEON IKW75N65RH5XKSA1

IKW75N65RH5XKSA1

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Infineon Technologies

THE IKW75N65RH5 IS A 650 V, 75 A TRENCHSTOP™ 5 H5 HYBRID COOLSIC™ IGBT DISCRETE

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IKW75N65RH5XKSA1 - INFINEON IKW75N65RH5XKSA1

IKW75N65RH5XKSA1

Active
Infineon Technologies

THE IKW75N65RH5 IS A 650 V, 75 A TRENCHSTOP™ 5 H5 HYBRID COOLSIC™ IGBT DISCRETE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIKW75N65RH5XKSA1
Current - Collector (Ic) (Max) [Max]80 A
Current - Collector Pulsed (Icm)300 A
Gate Charge168 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]395 W
Supplier Device PackagePG-TO247-3
Switching Energy360 µJ, 300 µJ
Td (on/off) @ 25°C26 ns, 180 ns
Test Condition15 V, 37.5 A, 400 V, 9 Ohm
Vce(on) (Max) @ Vge, Ic2.1 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 8.46
10$ 7.58
50$ 5.19
DigikeyTube 1$ 9.57
30$ 5.64
120$ 4.78
510$ 4.34
NewarkEach 1$ 11.71
10$ 9.90
25$ 9.51
50$ 8.94
100$ 8.37
480$ 7.42
720$ 6.97

Description

General part information

IKW75N65 Series

650 V, 75 A TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation CoolSiC™ Schottky barrier diode in TO-247-3 package. The ultra-fast 650 V hard-switchingTRENCHSTOP™ 5 H5IGBT benefits very low switching losses at switching speed above 30 kHz. Combination of ultra-fastTRENCHSTOP™ 5 H5IGBT with half-ratedfreewheeling SiC Schottky barrier diodesinCoolSiC™ Hybrid discreteenables unprecedented reduction of total switching losses and allows to increase significantly switching frequency.

Documents

Technical documentation and resources