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IKW75N65ET7XKSA1 - PG-TO247-3

IKW75N65ET7XKSA1

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Infineon Technologies

THE IKW75N65ET7 IS A 650 V, 75 A TRENCHSTOP™ IGBT7 DISCRETE WITH ANTI-PARALLEL DIODE IN TO-247 PACKAGE

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IKW75N65ET7XKSA1 - PG-TO247-3

IKW75N65ET7XKSA1

Active
Infineon Technologies

THE IKW75N65ET7 IS A 650 V, 75 A TRENCHSTOP™ IGBT7 DISCRETE WITH ANTI-PARALLEL DIODE IN TO-247 PACKAGE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIKW75N65ET7XKSA1
Current - Collector (Ic) (Max) [Max]80 A
Current - Collector Pulsed (Icm)225 A
Gate Charge435 nC
GradeAutomotive
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 C
Package / CaseTO-247-3
Power - Max [Max]333 W
QualificationAEC-Q101
Supplier Device PackagePG-TO247-3
Switching Energy2.17 mJ, 1.23 mJ
Td (on/off) @ 25°C310 ns, 28 ns
Test Condition4.7 Ohm, 400 V, 15 V, 75 A
Vce(on) (Max) @ Vge, Ic1.65 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 5.09
30$ 4.06
120$ 3.76
NewarkEach 1$ 7.42
10$ 7.41
25$ 5.87
50$ 5.69
100$ 5.61
480$ 5.61

Description

General part information

IKW75N65 Series

Hard-switching 650 V, 75 ATRENCHSTOP™ IGBT7discrete in TO-247 package with soft EC7 diode inside. This price performance optimized range has premium controllability for the better EMI while switching losses are lower than the former technologies.

Documents

Technical documentation and resources