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IKW75N65SS5XKSA1 - INFINEON IKW75N65SS5XKSA1

IKW75N65SS5XKSA1

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Infineon Technologies

THE IKW75N65SS5 IS A 650 V, 75 A TRENCHSTOP™ 5 S5 HYBRID COOLSIC™ IGBT DISCRETE

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IKW75N65SS5XKSA1 - INFINEON IKW75N65SS5XKSA1

IKW75N65SS5XKSA1

Active
Infineon Technologies

THE IKW75N65SS5 IS A 650 V, 75 A TRENCHSTOP™ 5 S5 HYBRID COOLSIC™ IGBT DISCRETE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIKW75N65SS5XKSA1
Current - Collector (Ic) (Max) [Max]80 A
Current - Collector Pulsed (Icm)300 A
Gate Charge164 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 C
Package / CaseTO-247-3
Power - Max [Max]395 W
Supplier Device PackagePG-TO247-3
Switching Energy750 µJ, 450 µJ
Td (on/off) @ 25°C145 ns, 22 ns
Vce(on) (Max) @ Vge, Ic1.7 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 240$ 7.11

Description

General part information

IKW75N65 Series

650 V, 75 A TRENCHSTOP™ 5 S5 IGBT co-packed with full-rated 6th generation Silicon Carbide CoolSiC™ Schottky barrier diode in TO-247-3 package. The 650 V hard-switchingTRENCHSTOP™ 5 S5IGBT technology addresses applications switching between 10 kHz and 40 kHz and due to high controllability and smooth switching behavior delivers not only high efficiency, but is easy to design-in. Combination of theTRENCHSTOP™ 5 S5IGBT technology with thefreewheeling SiC Schottky barrier diodesinCoolSiC™ Hybrid discretefurther reduces switching losses at almost unchanged dv/dt and di/dt values.

Documents

Technical documentation and resources