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ZXMN2A04DN8TA - 8 SO

ZXMN2A04DN8TA

Active
Diodes Inc

20V 5.9A 1.25W 35MΩ@2.5V,5A 700MV 2 N-CHANNEL SO-8 MOSFETS ROHS

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ZXMN2A04DN8TA - 8 SO

ZXMN2A04DN8TA

Active
Diodes Inc

20V 5.9A 1.25W 35MΩ@2.5V,5A 700MV 2 N-CHANNEL SO-8 MOSFETS ROHS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationZXMN2A04DN8TA
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C5.9 A
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]22.1 nC
Input Capacitance (Ciss) (Max) @ Vds1880 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power - Max [Max]1.8 W
Rds On (Max) @ Id, Vgs25 mOhm
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id700 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.88
10$ 1.56
100$ 1.24
Tape & Reel (TR) 500$ 0.81
LCSCPiece 1$ 0.58
10$ 0.57
30$ 0.57
100$ 0.56
NewarkEach (Supplied on Cut Tape) 1$ 2.30
10$ 1.60
25$ 1.46
50$ 1.30
100$ 1.15
250$ 1.06
500$ 0.99

Description

General part information

ZXMN2A04DN8 Series

TN1.pdf