
ZXMN2A04DN8TA
ActiveDiodes Inc
20V 5.9A 1.25W 35MΩ@2.5V,5A 700MV 2 N-CHANNEL SO-8 MOSFETS ROHS
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ZXMN2A04DN8TA
ActiveDiodes Inc
20V 5.9A 1.25W 35MΩ@2.5V,5A 700MV 2 N-CHANNEL SO-8 MOSFETS ROHS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | ZXMN2A04DN8TA |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 5.9 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 22.1 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1880 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power - Max [Max] | 1.8 W |
| Rds On (Max) @ Id, Vgs | 25 mOhm |
| Supplier Device Package | 8-SO |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 700 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
ZXMN2A04DN8 Series
TN1.pdf
Documents
Technical documentation and resources