ZXMN2A02N8TA
ActiveDiodes Inc
MOSFET N-CH 20V 8.3A 8SO
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ZXMN2A02N8TA
ActiveDiodes Inc
MOSFET N-CH 20V 8.3A 8SO
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | ZXMN2A02N8TA |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8.3 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 2.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 18.9 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power Dissipation (Max) | 1.56 W |
| Rds On (Max) @ Id, Vgs [Max] | 20 mOhm |
| Supplier Device Package | 8-SO |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 700 mV |
ZXMN2A04DN8 Series
N-Channel MOSFET
| Part | Vgs (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Technology | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Package / Case | FET Type | Rds On (Max) @ Id, Vgs [Max] | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Power - Max [Max] | Configuration | FET Feature | Package / Case [y] | Package / Case [x] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 12 V | 1.1 W | 837 pF | MOSFET (Metal Oxide) | 20 V | 2.5 V 4.5 V | 700 mV | SOT-23-6 | N-Channel | 55 mOhm | SOT-23-6 | -55 °C | 150 °C | 3.7 A | Surface Mount | |||||||||
Diodes Inc | 1880 pF | MOSFET (Metal Oxide) | 20 V | 700 mV | 8-SOIC | 8-SO | -55 °C | 150 °C | 5.9 A | Surface Mount | 1.8 W | 2 N-Channel (Dual) | Logic Level Gate | 3.9 mm | 0.154 in | 25 mOhm | 22.1 nC | |||||||
Diodes Inc | 1880 pF | MOSFET (Metal Oxide) | 20 V | 700 mV | 8-SOIC | 8-SO | -55 °C | 150 °C | 5.9 A | Surface Mount | 1.8 W | 2 N-Channel (Dual) | Logic Level Gate | 3.9 mm | 0.154 in | 25 mOhm | 22.1 nC | |||||||
Diodes Inc | 12 V | 1 W | 544 pF | MOSFET (Metal Oxide) | 20 V | 2.5 V 4.5 V | 700 mV | SC-59 SOT-23-3 TO-236-3 | N-Channel | SOT-23-3 | -55 °C | 150 °C | 3.4 A | Surface Mount | 60 mOhm | 6.6 nC | ||||||||
Diodes Inc | 12 V | 1.56 W | 1900 pF | MOSFET (Metal Oxide) | 20 V | 2.5 V 4.5 V | 700 mV | 8-SOIC | N-Channel | 20 mOhm | 8-SO | -55 °C | 150 °C | 8.3 A | Surface Mount | 3.9 mm | 0.154 in | 18.9 nC | ||||||
Diodes Inc | 12 V | 303 pF | MOSFET (Metal Oxide) | 20 V | 2.5 V 4.5 V | 700 mV | SC-59 SOT-23-3 TO-236-3 | N-Channel | 120 mOhm | SOT-23-3 | -55 °C | 150 °C | 1.9 A | Surface Mount | 3 nC | 625 mW |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.44 | |
| 10 | $ 1.18 | |||
| 100 | $ 0.91 | |||
| Digi-Reel® | 1 | $ 1.44 | ||
| 10 | $ 1.18 | |||
| 100 | $ 0.91 | |||
Description
General part information
ZXMN2A04DN8 Series
TN1.pdf
Documents
Technical documentation and resources