
ZXMN2A04DN8TC
ObsoleteDiodes Inc
MOSFET 2N-CH 20V 5.9A 8SO
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ZXMN2A04DN8TC
ObsoleteDiodes Inc
MOSFET 2N-CH 20V 5.9A 8SO
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | ZXMN2A04DN8TC |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 5.9 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 22.1 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1880 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power - Max [Max] | 1.8 W |
| Rds On (Max) @ Id, Vgs | 25 mOhm |
| Supplier Device Package | 8-SO |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 700 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
ZXMN2A04DN8 Series
TN1.pdf
Documents
Technical documentation and resources