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DMTH43M8LFGQ-7 - Package Image for PowerDI3333-8

DMTH43M8LFGQ-7

Active
Diodes Inc

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Search across all available documentation for this part.

DMTH43M8LFGQ-7 - Package Image for PowerDI3333-8

DMTH43M8LFGQ-7

Active
Diodes Inc

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMTH43M8LFGQ-7
Current - Continuous Drain (Id) @ 25°C100 A, 24 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On) [Max]10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs40.1 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds2798 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max) [Max]2.62 W, 65.2 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]3 mOhm
Supplier Device PackagePOWERDI3333-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.70
10$ 1.08
100$ 0.72
500$ 0.57
1000$ 0.52
Digi-Reel® 1$ 1.70
10$ 1.08
100$ 0.72
500$ 0.57
1000$ 0.52
Tape & Reel (TR) 2000$ 0.48
4000$ 0.45
6000$ 0.43

Description

General part information

DMTH43M8LFGQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: motor controls, DC-DC converters, and power management.