DMTH43M8LK3-13

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Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 17.6A I(D), 40V, 0.0036OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252, DPAK-3/2

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DMTH43M8LK3-13

Active

Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 17.6A I(D), 40V, 0.0036OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252, DPAK-3/2

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Technical Specifications

Parameters and characteristics for this part

Specification	DMTH43M8LK3-13

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	38.5 nC
Input Capacitance (Ciss) (Max) @ Vds	2693 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	88 W
Rds On (Max) @ Id, Vgs	3.6 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

DMTH43M8LFGQ Series

40V +175°C N-Channel Enhancement Mode MOSFET

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Qualification	Grade	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs
Diodes Inc DMTH43M8LFGQ-7	Surface Mount	2798 pF	10 V	5 V	-55 °C	175 ░C	N-Channel	3 mOhm	40.1 nC	20 V	MOSFET (Metal Oxide)	POWERDI3333-8	40 V	8-PowerVDFN	2.5 V	2.62 W 65.2 W	24 A 100 A	AEC-Q101	Automotive
Diodes Inc DMTH43M8LPS-13	Surface Mount	2693 pF	10 V	5 V	-55 °C	175 ░C	N-Channel		38.5 nC	20 V	MOSFET (Metal Oxide)	PowerDI5060-8	40 V	8-PowerTDFN	2.5 V		22 A 100 A	AEC-Q101	Automotive	2.7 W 83 W	3.3 mOhm
Diodes Inc DMTH43M8LFG-13	Surface Mount	2798 pF	10 V	5 V	-55 °C	175 ░C	N-Channel	3 mOhm	40.1 nC	20 V	MOSFET (Metal Oxide)	POWERDI3333-8	40 V	8-PowerVDFN	2.5 V	2.62 W 65.2 W	24 A 100 A
Diodes Inc DMTH43M8LK3-13	Surface Mount	2693 pF	10 V	5 V	-55 °C	175 ░C	N-Channel		38.5 nC	20 V	MOSFET (Metal Oxide)	TO-252 (DPAK)	40 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.5 V	88 W	100 A				3.6 mOhm
Diodes Inc DMTH43M8LFG-7	Surface Mount	2798 pF	10 V	5 V	-55 °C	175 ░C	N-Channel	3 mOhm	40.1 nC	20 V	MOSFET (Metal Oxide)	POWERDI3333-8	40 V	8-PowerVDFN	2.5 V	2.62 W 65.2 W	24 A 100 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.88
		10	$ 0.72
		100	$ 0.56
		500	$ 0.48
		1000	$ 0.39
	Digi-Reel®	1	$ 0.88
		10	$ 0.72
		100	$ 0.56
		500	$ 0.48
		1000	$ 0.39
	Tape & Reel (TR)	2500	$ 0.38
		5000	$ 0.35
		7500	$ 0.34

Description

General part information

DMTH43M8LFGQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: motor controls, DC-DC converters, and power management.