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DMTH43M8LFG-13 - PowerDI3333-8

DMTH43M8LFG-13

Active
Diodes Inc

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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DMTH43M8LFG-13 - PowerDI3333-8

DMTH43M8LFG-13

Active
Diodes Inc

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMTH43M8LFG-13
Current - Continuous Drain (Id) @ 25°C100 A, 24 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On) [Max]10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs40.1 nC
Input Capacitance (Ciss) (Max) @ Vds2798 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max) [Max]2.62 W, 65.2 W
Rds On (Max) @ Id, Vgs [Max]3 mOhm
Supplier Device PackagePOWERDI3333-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

DMTH43M8LFGQ Series

40V +175°C N-Channel Enhancement Mode MOSFET

PartMounting TypeInput Capacitance (Ciss) (Max) @ VdsDrive Voltage (Max Rds On, Min Rds On) [Max]Drive Voltage (Max Rds On, Min Rds On) [Min]Operating Temperature [Min]Operating Temperature [Max]FET TypeRds On (Max) @ Id, Vgs [Max]Gate Charge (Qg) (Max) @ VgsVgs (Max)TechnologySupplier Device PackageDrain to Source Voltage (Vdss)Package / CaseVgs(th) (Max) @ IdPower Dissipation (Max) [Max]Current - Continuous Drain (Id) @ 25°CQualificationGradePower Dissipation (Max)Rds On (Max) @ Id, Vgs
Diodes Inc
Surface Mount
2798 pF
10 V
5 V
-55 °C
175 ░C
N-Channel
3 mOhm
40.1 nC
20 V
MOSFET (Metal Oxide)
POWERDI3333-8
40 V
8-PowerVDFN
2.5 V
2.62 W
65.2 W
24 A
100 A
AEC-Q101
Automotive
Diodes Inc
Surface Mount
2693 pF
10 V
5 V
-55 °C
175 ░C
N-Channel
38.5 nC
20 V
MOSFET (Metal Oxide)
PowerDI5060-8
40 V
8-PowerTDFN
2.5 V
22 A
100 A
AEC-Q101
Automotive
2.7 W
83 W
3.3 mOhm
Diodes Inc
Surface Mount
2798 pF
10 V
5 V
-55 °C
175 ░C
N-Channel
3 mOhm
40.1 nC
20 V
MOSFET (Metal Oxide)
POWERDI3333-8
40 V
8-PowerVDFN
2.5 V
2.62 W
65.2 W
24 A
100 A
Diodes Inc
Surface Mount
2693 pF
10 V
5 V
-55 °C
175 ░C
N-Channel
38.5 nC
20 V
MOSFET (Metal Oxide)
TO-252 (DPAK)
40 V
DPAK (2 Leads + Tab)
SC-63
TO-252-3
2.5 V
88 W
100 A
3.6 mOhm
Diodes Inc
Surface Mount
2798 pF
10 V
5 V
-55 °C
175 ░C
N-Channel
3 mOhm
40.1 nC
20 V
MOSFET (Metal Oxide)
POWERDI3333-8
40 V
8-PowerVDFN
2.5 V
2.62 W
65.2 W
24 A
100 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.39
6000$ 0.36
9000$ 0.36

Description

General part information

DMTH43M8LFGQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: motor controls, DC-DC converters, and power management.