DMN2011UFDE-13

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Diodes Inc

MOSFET N-CH 20V 11.7A 6UDFN

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DMN2011UFDE-13

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Diodes Inc

MOSFET N-CH 20V 11.7A 6UDFN

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DocumentsDatasheet Recommended Soldering Techniques +1

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Technical Specifications

Parameters and characteristics for this part

Specification	DMN2011UFDE-13

Current - Continuous Drain (Id) @ 25°C	11.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	84 nC
Input Capacitance (Ciss) (Max) @ Vds	3372 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-PowerUDFN
Power Dissipation (Max)	610 mW
Rds On (Max) @ Id, Vgs	9.5 mOhm
Supplier Device Package	U-DFN2020-6 (Type E)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

DMN2011UFDF Series

20V N-Channel Enhancement Mode MOSFET

Part	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Configuration	Power - Max [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case [custom]	Package / Case [custom]	Gate Charge (Qg) (Max) @ Vgs [Max]
Diodes Inc DMN2011UFX-7	9.5 mOhm	20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	1 V	2248 pF	V-DFN2050-4	56 nC	4-VFDFN Exposed Pad	12.2 A	2 N-Channel (Dual) Common Drain	2.1 W	Surface Mount
Diodes Inc DMN2011UTS-13		20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	1 V		8-TSSOP	56 nC	8-TSSOP	21 A			Surface Mount	11 mOhm	2248 pF	1.3 W	N-Channel	1.5 V 4.5 V	12 V	0.173 "	4.4 mm
Diodes Inc DMN2011UFDE-7		20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	1 V		U-DFN2020-6 (Type E)	56 nC	6-PowerUDFN	11.7 A			Surface Mount	9.5 mOhm	2248 pF	610 mW	N-Channel	1.5 V 4.5 V	12 V
Diodes Inc DMN2011UFDF-13		20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	1 V		U-DFN2020-6 (Type F)	56 nC	6-UDFN Exposed Pad	14.2 A			Surface Mount	9.5 mOhm	2248 pF	2.1 W	N-Channel	1.5 V 4.5 V	12 V
Diodes Inc DMN2011UFDE-13		20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	1 V		U-DFN2020-6 (Type E)		6-PowerUDFN	11.7 A			Surface Mount	9.5 mOhm	3372 pF	610 mW	N-Channel	1.5 V 4.5 V	12 V			84 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	10000	$ 0.21
		20000	$ 0.21

Description

General part information

DMN2011UFDF Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

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