DMN2011UFDF-13
ActiveDiodes Inc
20V N-CHANNEL ENHANCEMENT MODE MOSFET
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DMN2011UFDF-13
ActiveDiodes Inc
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN2011UFDF-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 14.2 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2248 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Power Dissipation (Max) | 2.1 W |
| Rds On (Max) @ Id, Vgs | 9.5 mOhm |
| Supplier Device Package | U-DFN2020-6 (Type F) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 1 V |
DMN2011UFDF Series
20V N-Channel Enhancement Mode MOSFET
| Part | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Current - Continuous Drain (Id) @ 25°C | Configuration | Power - Max [Max] | Mounting Type | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Package / Case [custom] | Package / Case [custom] | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 9.5 mOhm | 20 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 1 V | 2248 pF | V-DFN2050-4 | 56 nC | 4-VFDFN Exposed Pad | 12.2 A | 2 N-Channel (Dual) Common Drain | 2.1 W | Surface Mount | |||||||||
Diodes Inc | 20 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 1 V | 8-TSSOP | 56 nC | 8-TSSOP | 21 A | Surface Mount | 11 mOhm | 2248 pF | 1.3 W | N-Channel | 1.5 V 4.5 V | 12 V | 0.173 " | 4.4 mm | |||||
Diodes Inc | 20 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 1 V | U-DFN2020-6 (Type E) | 56 nC | 6-PowerUDFN | 11.7 A | Surface Mount | 9.5 mOhm | 2248 pF | 610 mW | N-Channel | 1.5 V 4.5 V | 12 V | |||||||
Diodes Inc | 20 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 1 V | U-DFN2020-6 (Type F) | 56 nC | 6-UDFN Exposed Pad | 14.2 A | Surface Mount | 9.5 mOhm | 2248 pF | 2.1 W | N-Channel | 1.5 V 4.5 V | 12 V | |||||||
Diodes Inc | 20 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 1 V | U-DFN2020-6 (Type E) | 6-PowerUDFN | 11.7 A | Surface Mount | 9.5 mOhm | 3372 pF | 610 mW | N-Channel | 1.5 V 4.5 V | 12 V | 84 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.45 | |
| 10 | $ 0.39 | |||
| 100 | $ 0.27 | |||
| 500 | $ 0.21 | |||
| 1000 | $ 0.17 | |||
| 2000 | $ 0.15 | |||
| 5000 | $ 0.14 | |||
| Digi-Reel® | 1 | $ 0.45 | ||
| 10 | $ 0.39 | |||
| 100 | $ 0.27 | |||
| 500 | $ 0.21 | |||
| 1000 | $ 0.17 | |||
| 2000 | $ 0.15 | |||
| 5000 | $ 0.14 | |||
| Tape & Reel (TR) | 10000 | $ 0.13 | ||
| 30000 | $ 0.13 | |||
Description
General part information
DMN2011UFDF Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources