20V N-Channel Enhancement Mode MOSFET
20V N-Channel Enhancement Mode MOSFET
| Part | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Current - Continuous Drain (Id) @ 25°C | Configuration | Power - Max [Max] | Mounting Type | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Package / Case [custom] | Package / Case [custom] | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 9.5 mOhm | 20 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 1 V | 2248 pF | V-DFN2050-4 | 56 nC | 4-VFDFN Exposed Pad | 12.2 A | 2 N-Channel (Dual) Common Drain | 2.1 W | Surface Mount | |||||||||
Diodes Inc | 20 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 1 V | 8-TSSOP | 56 nC | 8-TSSOP | 21 A | Surface Mount | 11 mOhm | 2248 pF | 1.3 W | N-Channel | 1.5 V 4.5 V | 12 V | 0.173 " | 4.4 mm | |||||
Diodes Inc | 20 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 1 V | U-DFN2020-6 (Type E) | 56 nC | 6-PowerUDFN | 11.7 A | Surface Mount | 9.5 mOhm | 2248 pF | 610 mW | N-Channel | 1.5 V 4.5 V | 12 V | |||||||
Diodes Inc | 20 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 1 V | U-DFN2020-6 (Type F) | 56 nC | 6-UDFN Exposed Pad | 14.2 A | Surface Mount | 9.5 mOhm | 2248 pF | 2.1 W | N-Channel | 1.5 V 4.5 V | 12 V | |||||||
Diodes Inc | 20 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 1 V | U-DFN2020-6 (Type E) | 6-PowerUDFN | 11.7 A | Surface Mount | 9.5 mOhm | 3372 pF | 610 mW | N-Channel | 1.5 V 4.5 V | 12 V | 84 nC |