TSM300NB06CR RLG

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Taiwan Semiconductor Corporation

MOSFET N-CH 60V 6A/27A 8PDFN

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Taiwan Semiconductor Corporation

MOSFET N-CH 60V 6A/27A 8PDFN

Technical Specifications

Parameters and characteristics for this part

Specification	TSM300NB06CR RLG

Current - Continuous Drain (Id) @ 25°C	27 A, 6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds	1110 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerLDFN
Power Dissipation (Max)	3.1 W, 56 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	8-PDFN
Supplier Device Package [x]	5.2
Supplier Device Package [y]	5.75
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Package / Case	Vgs(th) (Max) @ Id	FET Feature	Power - Max	Gate Charge (Qg) (Max) @ Vgs	Configuration
Taiwan Semiconductor Corporation TSM300NB06CR RLG	N-Channel	1110 pF	20 V	30 mOhm	60 V	8-PDFN	5.75	5.2	18 nC	-55 °C	175 ░C	10 V	MOSFET (Metal Oxide)	Surface Mount	6 A 27 A	3.1 W 56 W	8-PowerLDFN	4.5 V
Taiwan Semiconductor Corporation TSM300NB06LDCR RLG		966 pF		30 mOhm	60 V	8-PDFNU (5x6)				-55 °C	150 °C		MOSFET (Metal Oxide)	Surface Mount	5 A 24 A		8-PowerTDFN	2.5 V	Logic Level Gate	2 W 40 W	17 nC	2 N-Channel (Dual)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 6A (Ta), 27A (Tc) 3.1W (Ta), 56W (Tc) Surface Mount 8-PDFN (5.2x5.75)