TSM300NB06LDCR RLG

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Taiwan Semiconductor Corporation

MOSFET 2N-CH 60V 5A/24A 8PDFNU

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Taiwan Semiconductor Corporation

MOSFET 2N-CH 60V 5A/24A 8PDFNU

Technical Specifications

Parameters and characteristics for this part

Specification	TSM300NB06LDCR RLG

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	24 A, 5 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	966 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max	40 W, 2 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	8-PDFNU (5x6)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Package / Case	Vgs(th) (Max) @ Id	FET Feature	Power - Max	Gate Charge (Qg) (Max) @ Vgs	Configuration
Taiwan Semiconductor Corporation TSM300NB06CR RLG	N-Channel	1110 pF	20 V	30 mOhm	60 V	8-PDFN	5.75	5.2	18 nC	-55 °C	175 ░C	10 V	MOSFET (Metal Oxide)	Surface Mount	6 A 27 A	3.1 W 56 W	8-PowerLDFN	4.5 V
Taiwan Semiconductor Corporation TSM300NB06LDCR RLG		966 pF		30 mOhm	60 V	8-PDFNU (5x6)				-55 °C	150 °C		MOSFET (Metal Oxide)	Surface Mount	5 A 24 A		8-PowerTDFN	2.5 V	Logic Level Gate	2 W 40 W	17 nC	2 N-Channel (Dual)

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General part information

Mosfet Array 60V 5A (Ta), 24A (Tc) 2W (Ta), 40W (Tc) Surface Mount 8-PDFNU (5x6)

Technical documentation and resources