TSM300 Series

Catalog

MOSFET N-CH 60V 6A/27A 8PDFN

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Package / Case	Vgs(th) (Max) @ Id	FET Feature	Power - Max	Gate Charge (Qg) (Max) @ Vgs	Configuration
Taiwan Semiconductor Corporation TSM300NB06CR RLG	N-Channel	1110 pF	20 V	30 mOhm	60 V	8-PDFN	5.75	5.2	18 nC	-55 °C	175 ░C	10 V	MOSFET (Metal Oxide)	Surface Mount	6 A 27 A	3.1 W 56 W	8-PowerLDFN	4.5 V
Taiwan Semiconductor Corporation TSM300NB06LDCR RLG		966 pF		30 mOhm	60 V	8-PDFNU (5x6)				-55 °C	150 °C		MOSFET (Metal Oxide)	Surface Mount	5 A 24 A		8-PowerTDFN	2.5 V	Logic Level Gate	2 W 40 W	17 nC	2 N-Channel (Dual)