IR2181STRPBF

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Infineon Technologies

MOSFET DRIVER, HIGH SIDE AND LOW SIDE, 10V-20V SUPPLY, 2.3A OUTPUT, SOIC-8

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Infineon Technologies

MOSFET DRIVER, HIGH SIDE AND LOW SIDE, 10V-20V SUPPLY, 2.3A OUTPUT, SOIC-8

Technical Specifications

Parameters and characteristics for this part

Specification	IR2181STRPBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	2.3 A
Current - Peak Output (Source, Sink) [custom]	1.9 A
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.7 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	20 ns
Rise / Fall Time (Typ) [custom]	40 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	Input Type	High Side Voltage - Max (Bootstrap) [Max]	Number of Drivers	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Package / Case	Package / Case	Gate Type	Channel Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Logic Voltage - VIL, VIH	Driven Configuration	Voltage - Supply [Max]	Voltage - Supply [Min]	Mounting Type	Supplier Device Package	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Package / Case [y]	Package / Case [x]
Infineon Technologies IR2181PBF	Non-Inverting	600 V	2	150 °C	-40 °C	0.3 in	8-DIP	7.62 mm	IGBT N-Channel MOSFET	Independent	2.3 A	1.9 A	0.8 V 2.7 V	Half-Bridge	20 V	10 VDC	Through Hole	8-PDIP	20 ns	40 ns
Infineon Technologies IR2181PBF	Non-Inverting	600 V	2	150 °C	-40 °C	0.3 in	8-DIP	7.62 mm	IGBT N-Channel MOSFET	Independent	2.3 A	1.9 A	0.8 V 2.7 V	Half-Bridge	20 V	10 VDC	Through Hole	8-PDIP	20 ns	40 ns
Infineon Technologies IR2181	Non-Inverting	600 V	2	150 °C	-40 °C	0.3 in	8-DIP	7.62 mm	IGBT N-Channel MOSFET	Independent	2.3 A	1.9 A	0.8 V 2.7 V	Half-Bridge	20 V	10 VDC	Through Hole	8-PDIP	20 ns	40 ns
Infineon Technologies IR2181STRPBF	Non-Inverting	600 V	2	150 °C	-40 °C		8-SOIC		IGBT N-Channel MOSFET	Independent	2.3 A	1.9 A	0.8 V 2.7 V	Half-Bridge	20 V	10 VDC	Surface Mount	8-SOIC	20 ns	40 ns	3.9 mm	0.154 in
Infineon Technologies IR2181SPBF	Non-Inverting	600 V	2	150 °C	-40 °C		8-SOIC		IGBT N-Channel MOSFET	Independent	2.3 A	1.9 A	0.8 V 2.7 V	Half-Bridge	20 V	10 VDC	Surface Mount	8-SOIC	20 ns	40 ns	3.9 mm	0.154 in

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Half-Bridge Gate Driver IC Non-Inverting 8-SOIC

Technical documentation and resources