IR2181SPBF

NRND

Infineon Technologies

THE IR2181S IS A 600 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC (8 LEAD SOIC PACKAGE)

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DocumentsDatasheet Technical Data Sheet EN

IR2181SPBF

NRND

Infineon Technologies

THE IR2181S IS A 600 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC (8 LEAD SOIC PACKAGE)

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2181SPBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	2.3 A
Current - Peak Output (Source, Sink) [custom]	1.9 A
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.7 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	20 ns
Rise / Fall Time (Typ) [custom]	40 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2181 Series

Part	Input Type	High Side Voltage - Max (Bootstrap) [Max]	Number of Drivers	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Package / Case	Package / Case	Gate Type	Channel Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Logic Voltage - VIL, VIH	Driven Configuration	Voltage - Supply [Max]	Voltage - Supply [Min]	Mounting Type	Supplier Device Package	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Package / Case [y]	Package / Case [x]
Infineon Technologies IR2181PBF	Non-Inverting	600 V	2	150 °C	-40 °C	0.3 in	8-DIP	7.62 mm	IGBT N-Channel MOSFET	Independent	2.3 A	1.9 A	0.8 V 2.7 V	Half-Bridge	20 V	10 VDC	Through Hole	8-PDIP	20 ns	40 ns
Infineon Technologies IR2181PBF	Non-Inverting	600 V	2	150 °C	-40 °C	0.3 in	8-DIP	7.62 mm	IGBT N-Channel MOSFET	Independent	2.3 A	1.9 A	0.8 V 2.7 V	Half-Bridge	20 V	10 VDC	Through Hole	8-PDIP	20 ns	40 ns
Infineon Technologies IR2181	Non-Inverting	600 V	2	150 °C	-40 °C	0.3 in	8-DIP	7.62 mm	IGBT N-Channel MOSFET	Independent	2.3 A	1.9 A	0.8 V 2.7 V	Half-Bridge	20 V	10 VDC	Through Hole	8-PDIP	20 ns	40 ns
Infineon Technologies IR2181STRPBF	Non-Inverting	600 V	2	150 °C	-40 °C		8-SOIC		IGBT N-Channel MOSFET	Independent	2.3 A	1.9 A	0.8 V 2.7 V	Half-Bridge	20 V	10 VDC	Surface Mount	8-SOIC	20 ns	40 ns	3.9 mm	0.154 in
Infineon Technologies IR2181SPBF	Non-Inverting	600 V	2	150 °C	-40 °C		8-SOIC		IGBT N-Channel MOSFET	Independent	2.3 A	1.9 A	0.8 V 2.7 V	Half-Bridge	20 V	10 VDC	Surface Mount	8-SOIC	20 ns	40 ns	3.9 mm	0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.01
		10	$ 2.70
		95	$ 2.21
		285	$ 2.10
		570	$ 2.00
Newark	Each	1	$ 2.59
		10	$ 2.28

Description

General part information

IR2181 Series

EiceDRIVER™ 600 V high and low-sideGate Driver ICwith typical 1.9 A source and 2.3 A sink currents in 8 Lead SOIC package forIGBTsandMOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14-Lead PDIP . For the new version with ourSOI technologywe recommend2ED2181S06F, providing integrated bootstrap diode, better robustness and higher switching frequency