DRIVER 600V 2-OUT HIGH SIDE/LOW SIDE NON-INV 8-PIN PDIP TUBE
| Part | Input Type | High Side Voltage - Max (Bootstrap) [Max] | Number of Drivers | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Package / Case | Package / Case | Gate Type | Channel Type | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Logic Voltage - VIL, VIH | Driven Configuration | Voltage - Supply [Max] | Voltage - Supply [Min] | Mounting Type | Supplier Device Package | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Non-Inverting | 600 V | 2 | 150 °C | -40 °C | 0.3 in | 8-DIP | 7.62 mm | IGBT N-Channel MOSFET | Independent | 2.3 A | 1.9 A | 0.8 V 2.7 V | Half-Bridge | 20 V | 10 VDC | Through Hole | 8-PDIP | 20 ns | 40 ns | ||
Infineon Technologies | Non-Inverting | 600 V | 2 | 150 °C | -40 °C | 0.3 in | 8-DIP | 7.62 mm | IGBT N-Channel MOSFET | Independent | 2.3 A | 1.9 A | 0.8 V 2.7 V | Half-Bridge | 20 V | 10 VDC | Through Hole | 8-PDIP | 20 ns | 40 ns | ||
Infineon Technologies | Non-Inverting | 600 V | 2 | 150 °C | -40 °C | 0.3 in | 8-DIP | 7.62 mm | IGBT N-Channel MOSFET | Independent | 2.3 A | 1.9 A | 0.8 V 2.7 V | Half-Bridge | 20 V | 10 VDC | Through Hole | 8-PDIP | 20 ns | 40 ns | ||
Infineon Technologies | Non-Inverting | 600 V | 2 | 150 °C | -40 °C | 8-SOIC | IGBT N-Channel MOSFET | Independent | 2.3 A | 1.9 A | 0.8 V 2.7 V | Half-Bridge | 20 V | 10 VDC | Surface Mount | 8-SOIC | 20 ns | 40 ns | 3.9 mm | 0.154 in | ||
Infineon Technologies | Non-Inverting | 600 V | 2 | 150 °C | -40 °C | 8-SOIC | IGBT N-Channel MOSFET | Independent | 2.3 A | 1.9 A | 0.8 V 2.7 V | Half-Bridge | 20 V | 10 VDC | Surface Mount | 8-SOIC | 20 ns | 40 ns | 3.9 mm | 0.154 in |