DMT2004UFV-7

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Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

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DMT2004UFV-7

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Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

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DocumentsDatasheet Recommended Soldering Techniques +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMT2004UFV-7

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	24 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53.7 nC
Input Capacitance (Ciss) (Max) @ Vds	1683 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	1.2 W
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	PowerDI3333-8 (Type UX)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.45 V

DMT2004UFDF Series

N-Channel Enhancement Mode MOSFET

Part	Qualification	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Grade	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Rds On (Max) @ Id, Vgs [Max]
Diodes Inc DMT2004UFG-7	AEC-Q101	5 mOhm	Surface Mount	1.45 V	24 V	Automotive	53.7 nC	-55 °C	150 °C	10 V	2.5 V	12 V	POWERDI3333-8	1683 pF	2.3 W	MOSFET (Metal Oxide)	70 A	8-PowerVDFN	N-Channel
Diodes Inc DMT2004UFDF-13	AEC-Q101		Surface Mount	1.45 V	24 V	Automotive	53.7 nC	-55 °C	150 °C	10 V	2.5 V	12 V	U-DFN2020-6 (Type F)	1683 pF	12.5 W 800 mW	MOSFET (Metal Oxide)	14.1 A	6-UDFN Exposed Pad	N-Channel	6 mOhm
Diodes Inc DMT2004UFDF-7	AEC-Q101		Surface Mount	1.45 V	24 V	Automotive	53.7 nC	-55 °C	150 °C	10 V	2.5 V	12 V	U-DFN2020-6 (Type F)	1683 pF	12.5 W 800 mW	MOSFET (Metal Oxide)	14.1 A	6-UDFN Exposed Pad	N-Channel	6 mOhm
Diodes Inc DMT2004UFV-7		5 mOhm	Surface Mount	1.45 V	24 V		53.7 nC	-55 °C	150 °C	10 V	2.5 V	12 V	PowerDI3333-8 (Type UX)	1683 pF	1.2 W	MOSFET (Metal Oxide)	70 A	8-PowerVDFN	N-Channel
Diodes Inc DMT2004UFV-13		5 mOhm	Surface Mount	1.45 V	24 V		53.7 nC	-55 °C	150 °C	10 V	2.5 V	12 V	PowerDI3333-8 (Type UX)	1683 pF	1.2 W	MOSFET (Metal Oxide)	70 A	8-PowerVDFN	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	2000	$ 0.23
		4000	$ 0.21
		6000	$ 0.20
		10000	$ 0.19
		14000	$ 0.18
		20000	$ 0.18

Description

General part information

DMT2004UFDF Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.