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DMT2004UFDF-7 - U-DFN2020-6 Type F

DMT2004UFDF-7

Active
Diodes Inc

MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 3K

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DMT2004UFDF-7 - U-DFN2020-6 Type F

DMT2004UFDF-7

Active
Diodes Inc

MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 3K

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT2004UFDF-7
Current - Continuous Drain (Id) @ 25°C14.1 A
Drain to Source Voltage (Vdss)24 V
Drive Voltage (Max Rds On, Min Rds On) [Max]2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs53.7 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1683 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-UDFN Exposed Pad
Power Dissipation (Max)800 mW, 12.5 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]6 mOhm
Supplier Device PackageU-DFN2020-6 (Type F)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id1.45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.92
10$ 0.57
100$ 0.37
500$ 0.29
1000$ 0.26
Digi-Reel® 1$ 0.92
10$ 0.57
100$ 0.37
500$ 0.29
1000$ 0.26
Tape & Reel (TR) 3000$ 0.22
6000$ 0.21
9000$ 0.20
15000$ 0.19
21000$ 0.18

Description

General part information

DMT2004UFDF Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.