DMT2004UFDF Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Qualification	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Grade	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Rds On (Max) @ Id, Vgs [Max]
Diodes Inc DMT2004UFG-7	AEC-Q101	5 mOhm	Surface Mount	1.45 V	24 V	Automotive	53.7 nC	-55 °C	150 °C	10 V	2.5 V	12 V	POWERDI3333-8	1683 pF	2.3 W	MOSFET (Metal Oxide)	70 A	8-PowerVDFN	N-Channel
Diodes Inc DMT2004UFDF-13	AEC-Q101		Surface Mount	1.45 V	24 V	Automotive	53.7 nC	-55 °C	150 °C	10 V	2.5 V	12 V	U-DFN2020-6 (Type F)	1683 pF	12.5 W 800 mW	MOSFET (Metal Oxide)	14.1 A	6-UDFN Exposed Pad	N-Channel	6 mOhm
Diodes Inc DMT2004UFDF-7	AEC-Q101		Surface Mount	1.45 V	24 V	Automotive	53.7 nC	-55 °C	150 °C	10 V	2.5 V	12 V	U-DFN2020-6 (Type F)	1683 pF	12.5 W 800 mW	MOSFET (Metal Oxide)	14.1 A	6-UDFN Exposed Pad	N-Channel	6 mOhm
Diodes Inc DMT2004UFV-7		5 mOhm	Surface Mount	1.45 V	24 V		53.7 nC	-55 °C	150 °C	10 V	2.5 V	12 V	PowerDI3333-8 (Type UX)	1683 pF	1.2 W	MOSFET (Metal Oxide)	70 A	8-PowerVDFN	N-Channel
Diodes Inc DMT2004UFV-13		5 mOhm	Surface Mount	1.45 V	24 V		53.7 nC	-55 °C	150 °C	10 V	2.5 V	12 V	PowerDI3333-8 (Type UX)	1683 pF	1.2 W	MOSFET (Metal Oxide)	70 A	8-PowerVDFN	N-Channel

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• Low RDS(ON) – ensures on state losses are minimized

• Small form factor thermally efficient package enables higher density end products

• Occupies just 33% of the board area occupied by SO-8 enabling smaller end product

• 100% Unclamped Inductive Switch (UIS) Test in Production

• Totally Lead-Free & Fully RoHS Compliant

• Halogen and Antimony Free. "Green" Device

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.