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UG06BH - SFT15G A0G

UG06BH

Active
Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 600MA TS-1

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UG06BH - SFT15G A0G

UG06BH

Active
Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 600MA TS-1

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationUG06BH
Capacitance @ Vr, F9 pF
Current - Average Rectified (Io)600 mA
Current - Reverse Leakage @ Vr5 µA
GradeAutomotive
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseT-18, Axial
QualificationAEC-Q101
Reverse Recovery Time (trr)15 ns
Speed200 mA, 500 ns
Supplier Device PackageTS-1
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]100 V
Voltage - Forward (Vf) (Max) @ If950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.47
10$ 0.33
100$ 0.17
500$ 0.14
1000$ 0.10
2000$ 0.09
Tape & Reel (TR) 5000$ 0.08
10000$ 0.07
25000$ 0.07
50000$ 0.06
125000$ 0.06

Description

General part information

UG06 Series

Diode 100 V 600mA Through Hole TS-1

Documents

Technical documentation and resources