
UG06BHA0G
ActiveTaiwan Semiconductor Corporation
DIODE GEN PURP 100V 600MA TS-1
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UG06BHA0G
ActiveTaiwan Semiconductor Corporation
DIODE GEN PURP 100V 600MA TS-1
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | UG06BHA0G |
|---|---|
| Capacitance @ Vr, F | 9 pF |
| Current - Average Rectified (Io) | 600 mA |
| Current - Reverse Leakage @ Vr | 5 µA |
| Grade | Automotive |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | T-18, Axial |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 15 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TS-1 |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
UG06 Series
Diode 100 V 600mA Through Hole TS-1
Documents
Technical documentation and resources