UG06CH

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Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 600MA TS-1

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Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 600MA TS-1

Technical Specifications

Parameters and characteristics for this part

Specification	UG06CH

Capacitance @ Vr, F	9 pF
Current - Average Rectified (Io)	600 mA
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	T-18, Axial
Qualification	AEC-Q101
Reverse Recovery Time (trr)	15 ns
Speed	200 mA, 500 ns
Supplier Device Package	TS-1
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	950 mV

Part	Technology	Supplier Device Package	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Package / Case	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Speed	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Grade
Taiwan Semiconductor Corporation UG06C	Standard	TS-1	15 ns	600 mA	T-18 Axial	9 pF	150 °C	-55 °C	Through Hole	950 mV	200 mA 500 ns	5 µA
Taiwan Semiconductor Corporation UG06BHA0G	Standard	TS-1	15 ns	600 mA	T-18 Axial	9 pF	150 °C	-55 °C	Through Hole	950 mV	200 mA 500 ns	5 µA	100 V	AEC-Q101	Automotive
Taiwan Semiconductor Corporation UG06CH	Standard	TS-1	15 ns	600 mA	T-18 Axial	9 pF	150 °C	-55 °C	Through Hole	950 mV	200 mA 500 ns	5 µA		AEC-Q101	Automotive
Taiwan Semiconductor Corporation UG06A	Standard	TS-1	15 ns	600 mA	T-18 Axial	9 pF	150 °C	-55 °C	Through Hole	950 mV	200 mA 500 ns	5 µA	50 V
Taiwan Semiconductor Corporation UG06DH	Standard	TS-1	15 ns	600 mA	T-18 Axial	9 pF	150 °C	-55 °C	Through Hole	950 mV	200 mA 500 ns	5 µA	200 V	AEC-Q101	Automotive
Taiwan Semiconductor Corporation UG06BH	Standard	TS-1	15 ns	600 mA	T-18 Axial	9 pF	150 °C	-55 °C	Through Hole	950 mV	200 mA 500 ns	5 µA	100 V	AEC-Q101	Automotive
Taiwan Semiconductor Corporation UG06D	Standard	TS-1	15 ns	600 mA	T-18 Axial	9 pF	150 °C	-55 °C	Through Hole	950 mV	200 mA 500 ns	5 µA	200 V

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General part information

Diode 150 V 600mA Through Hole TS-1

Technical documentation and resources