
UG06CH
ActiveTaiwan Semiconductor Corporation
DIODE GEN PURP 150V 600MA TS-1

UG06CH
ActiveTaiwan Semiconductor Corporation
DIODE GEN PURP 150V 600MA TS-1
Description
General part information
UG06 Series
Diode 150 V 600mA Through Hole TS-1
Technical Specifications
Parameters and characteristics for this part
| Specification | UG06CH |
|---|---|
| Capacitance | 9 pF |
| Current - Average Rectified (Io) | 600 mA |
| Current - Reverse Leakage | 5 µA |
| Grade | Automotive |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 150 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | T-18, Axial |
| Package Name | TS-1 |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 15 ns |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) | 950 mV |
Pricing
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CAD
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Documents
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