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S25FL127SABMFI101 - 8-SOIC

S25FL127SABMFI101

Infineon Technologies

FLASH MEMORY, SERIAL NOR, 128 MBIT, 16M X 8BIT, SPI, SOIC, 8 PINS

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S25FL127SABMFI101 - 8-SOIC

S25FL127SABMFI101

Infineon Technologies

FLASH MEMORY, SERIAL NOR, 128 MBIT, 16M X 8BIT, SPI, SOIC, 8 PINS

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationS25FL127SABMFI101
Clock Frequency108 MHz
Memory FormatFLASH
Memory InterfaceSPI - Quad I/O
Memory Organization16M x 8
Memory Size128 Mb
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case8-SOIC
Package / Case [x]0.209 "
Package / Case [y]5.3 mm
Supplier Device Package8-SOIC
TechnologyFLASH - NOR
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]2.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 3.94
10$ 3.58
25$ 3.50
91$ 3.12
273$ 3.11
546$ 3.00
1001$ 2.85

Description

General part information

S25FL127 Series

S25FL127SABMFI101 is a 3.0V SPI flash memory. It features MirrorBit technology that stores two data bits in each memory array transistor. The Eclipse architecture dramatically improves the program and erases performance. It has 65nm process lithography. This device connects to a host system via an SPI. Traditional SPI single-bit serial input and output (Single I/O or SIO) is supported as well as optional two-bit (dual I/O or DIO) and four-bit (quad I/O or QIO) serial commands. This multiple-width interface is called SPI multi-I/O or MIO. The eclipse architecture features a page programming buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms.

Documents

Technical documentation and resources