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S25FL127SABMFI103 - 8-SOIC

S25FL127SABMFI103

Infineon Technologies

FLASH MEMORY, SERIAL NOR, 128 MBIT, 16M X 8BIT, SPI, SOIC, 8 PINS

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S25FL127SABMFI103 - 8-SOIC

S25FL127SABMFI103

Infineon Technologies

FLASH MEMORY, SERIAL NOR, 128 MBIT, 16M X 8BIT, SPI, SOIC, 8 PINS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationS25FL127SABMFI103
Clock Frequency108 MHz
Memory FormatFLASH
Memory InterfaceSPI - Quad I/O
Memory Organization16M x 8
Memory Size128 Mb
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case8-SOIC
Package / Case [x]0.209 "
Package / Case [y]5.3 mm
Supplier Device Package8-SOIC
TechnologyFLASH - NOR
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]2.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.94
10$ 3.58
25$ 3.50
50$ 3.48
100$ 3.12
250$ 3.11
500$ 3.00
1000$ 2.85
Digi-Reel® 1$ 3.94
10$ 3.58
25$ 3.50
50$ 3.48
100$ 3.12
250$ 3.11
500$ 3.00
1000$ 2.85
Tape & Reel (TR) 2100$ 2.82

Description

General part information

S25FL127 Series

S25FL127SABMFI103 is a 128Mb (16MB), 3.0V SPI flash memory. This device connects to a host system via an SPI. Traditional SPI singlebit serial input and output (Single I/O or SIO) is supported as well as optional twobit (Dual I/O or DIO) and fourbit (Quad I/O or QIO) serial commands. This multiple-width interface is called SPI Multi-I/O or MIO. The Eclipse architecture features a page programming buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erasing than prior generation SPI programs or erase algorithms. Executing code directly from flash memory is often called Execute-In-Place or XIP. By using FL-S devices at higher clock rates supported, with QIO command, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically.

Documents

Technical documentation and resources