BYR29X-600,127

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WeEn Semiconductors

DIODE GEN PURP 600V 8A TO220FP

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WeEn Semiconductors

DIODE GEN PURP 600V 8A TO220FP

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General part information

Diode 600 V 8A Through Hole TO-220FP

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Parameters and characteristics commom to parts in this series

Specification	BYR29X-600,127	BYR29 Series

Current - Average Rectified (Io)	8 A	8 A
Current - Reverse Leakage @ Vr	10 µA	10 µA
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction	150 °C	150 °C
Operating Temperature - Junction	-	175 °C
Package / Case	TO-220-2 Full Pack, Isolated Tab	TO-220-2, TO-220-2 Full Pack, Isolated Tab
Reverse Recovery Time (trr)	75 ns	55 - 75 ns
Speed	200 mA, 500 ns	200 - 500 mA
Supplier Device Package	TO-220FP	TO-220AC, TO-220FP
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V	600 - 800 V
Voltage - Forward (Vf) (Max) @ If	1.7 V	1.5 - 8 V

DIODE GEN PURP 600V 8A TO220AC

Part	Operating Temperature - Junction	Reverse Recovery Time (trr)	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Technology	Current - Reverse Leakage @ Vr	Mounting Type	Supplier Device Package	Operating Temperature - Junction [Max]
WeEn Semiconductors BYR29-600,127	150 °C	75 ns	TO-220-2	600 V	200 mA, 500 ns	8 A	1.5 V, 8 A	Standard	10 µA	Through Hole	TO-220AC
WeEn Semiconductors BYR29X-600,127	150 °C	75 ns	TO-220-2 Full Pack, Isolated Tab	600 V	200 mA, 500 ns	8 A	1.7 V	Standard	10 µA	Through Hole	TO-220FP
WeEn Semiconductors BYR29-800,127	150 °C	75 ns	TO-220-2	800 V	200 mA, 500 ns	8 A	1.5 V, 8 A	Standard	10 µA	Through Hole	TO-220AC
WeEn Semiconductors BYR29X-800,127	150 °C	75 ns	TO-220-2 Full Pack, Isolated Tab	800 V	200 mA, 500 ns	8 A	1.7 V	Standard	10 µA	Through Hole	TO-220FP
WeEn Semiconductors BYR29X-800PQ		55 ns	TO-220-2 Full Pack, Isolated Tab	800 V	200 mA, 500 ns	8 A	1.7 V	Standard	10 µA	Through Hole	TO-220FP	175 °C