BYR29 Series

Catalog

DIODE GEN PURP 600V 8A TO220AC

Part	Operating Temperature - Junction	Reverse Recovery Time (trr)	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Technology	Current - Reverse Leakage @ Vr	Mounting Type	Supplier Device Package	Operating Temperature - Junction [Max]
WeEn Semiconductors BYR29-600,127	150 °C	75 ns	TO-220-2	600 V	200 mA, 500 ns	8 A	1.5 V, 8 A	Standard	10 µA	Through Hole	TO-220AC
WeEn Semiconductors BYR29X-600,127	150 °C	75 ns	TO-220-2 Full Pack, Isolated Tab	600 V	200 mA, 500 ns	8 A	1.7 V	Standard	10 µA	Through Hole	TO-220FP
WeEn Semiconductors BYR29-800,127	150 °C	75 ns	TO-220-2	800 V	200 mA, 500 ns	8 A	1.5 V, 8 A	Standard	10 µA	Through Hole	TO-220AC
WeEn Semiconductors BYR29X-800,127	150 °C	75 ns	TO-220-2 Full Pack, Isolated Tab	800 V	200 mA, 500 ns	8 A	1.7 V	Standard	10 µA	Through Hole	TO-220FP
WeEn Semiconductors BYR29X-800PQ		55 ns	TO-220-2 Full Pack, Isolated Tab	800 V	200 mA, 500 ns	8 A	1.7 V	Standard	10 µA	Through Hole	TO-220FP	175 °C