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BSC026NE2LS5ATMA1 - 8-Power TDFN

BSC026NE2LS5ATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 25 V ; SUPERSO8 5X6 PACKAGE; 2.6 MOHM;

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BSC026NE2LS5ATMA1 - 8-Power TDFN

BSC026NE2LS5ATMA1

Active
Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 25 V ; SUPERSO8 5X6 PACKAGE; 2.6 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC026NE2LS5ATMA1
Current - Continuous Drain (Id) @ 25°C82 A, 24 A
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]16 nC
Input Capacitance (Ciss) (Max) @ Vds1100 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)2.5 W, 29 W
Rds On (Max) @ Id, Vgs2.6 mOhm
Supplier Device PackagePG-TDSON-8-7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.75
10$ 1.11
100$ 0.75
500$ 0.59
1000$ 0.54
2000$ 0.50
Digi-Reel® 1$ 1.75
10$ 1.11
100$ 0.75
500$ 0.59
1000$ 0.54
2000$ 0.50
Tape & Reel (TR) 5000$ 0.45
10000$ 0.45

Description

General part information

BSC026 Series

With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation.

Documents

Technical documentation and resources