BSC026N08NS5ATMA1

Active

Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; SUPERSO8 5X6 PACKAGE; 2.6 MOHM;

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

BSC026N08NS5ATMA1

Active

Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; SUPERSO8 5X6 PACKAGE; 2.6 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSC026N08NS5ATMA1

Current - Continuous Drain (Id) @ 25°C	23 A, 100 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	92 nC
Input Capacitance (Ciss) (Max) @ Vds	6800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.5 W, 156 W
Rds On (Max) @ Id, Vgs	2.6 mOhm
Supplier Device Package	PG-TDSON-8-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

BSC026 Series

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies BSC026N02KSGAUMA1	Surface Mount	7800 pF	N-Channel	-55 °C	150 °C	2.6 mOhm	8-PowerTDFN	20 V	MOSFET (Metal Oxide)	25 A 100 A	12 V	2.5 V 4.5 V	52.7 nC	1.2 V	PG-TDSON-8-1
Infineon Technologies BSC026NE2LS5ATMA1	Surface Mount	1100 pF	N-Channel	-55 °C	150 °C	2.6 mOhm	8-PowerTDFN	25 V	MOSFET (Metal Oxide)	24 A 82 A	16 V	4.5 V 10 V		2 V	PG-TDSON-8-7	2.5 W 29 W	16 nC
Infineon Technologies BSC026N08NS5ATMA1	Surface Mount	6800 pF	N-Channel	-55 °C	150 °C	2.6 mOhm	8-PowerTDFN	80 V	MOSFET (Metal Oxide)	23 A 100 A	20 V	6 V 10 V	92 nC	3.8 V	PG-TDSON-8-6	2.5 W 156 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.02
		10	$ 2.36
		100	$ 1.78
		500	$ 1.58
		1000	$ 1.47
		2000	$ 1.47
	Digi-Reel®	1	$ 3.02
		10	$ 2.36
		100	$ 1.78
		500	$ 1.58
		1000	$ 1.47
		2000	$ 1.47
	Tape & Reel (TR)	5000	$ 1.41
Newark	Each (Supplied on Full Reel)	5000	$ 2.05

Description

General part information

BSC026 Series

OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification fortelecomandserver power supplies. In addition, the device can also be utilized in other industrial applications such assolar,low voltage drivesandadapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on)reduction of up to 43%.

Documents

Technical documentation and resources