OPTIMOS™ N-CHANNEL POWER MOSFET 20 V ; SUPERSO8 5X6 PACKAGE; 2.6 MOHM; SUPER LOGIC LEVEL
| Part | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Package / Case | Drain to Source Voltage (Vdss) | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Surface Mount | 7800 pF | N-Channel | -55 °C | 150 °C | 2.6 mOhm | 8-PowerTDFN | 20 V | MOSFET (Metal Oxide) | 25 A 100 A | 12 V | 2.5 V 4.5 V | 52.7 nC | 1.2 V | PG-TDSON-8-1 | ||
Infineon Technologies | Surface Mount | 1100 pF | N-Channel | -55 °C | 150 °C | 2.6 mOhm | 8-PowerTDFN | 25 V | MOSFET (Metal Oxide) | 24 A 82 A | 16 V | 4.5 V 10 V | 2 V | PG-TDSON-8-7 | 2.5 W 29 W | 16 nC | |
Infineon Technologies | Surface Mount | 6800 pF | N-Channel | -55 °C | 150 °C | 2.6 mOhm | 8-PowerTDFN | 80 V | MOSFET (Metal Oxide) | 23 A 100 A | 20 V | 6 V 10 V | 92 nC | 3.8 V | PG-TDSON-8-6 | 2.5 W 156 W |